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Speckle Defect by Dark Leakage Current in Nitride Stringer at the Edge of Shallow Trench Isolation for CMOS Image Sensors

机译：CmOs图像传感器浅沟槽隔离边缘氮化物纵梁暗漏电流斑点缺陷

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Woo-yang Jeong; Keun-man Yi;
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年度 2009
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1. Total Ionizing Dose Effects on Quantum Efficiency and Dark Current of CMOS Image Sensors with Deep-Trench-Isolation [J] . Nayera Ahmed, Guo-Neng Lu, Francois Roy Sensor Letters: A Journal Dedicated to all Aspects of Sensors in Science, Engineering, and Medicine . 2015,第7期

机译：深度沟道隔离对CMOS图像传感器的量子效率和暗电流的总电离剂量影响
2. Total dose effects on the shallow-trench isolation leakage current characteristics in a 0.35 /spl mu/m SiGe BiCMOS technology [J] . Guofu Niu, Mathew S.J. IEEE Transactions on Nuclear Science . 1999,第6期

机译：0.35 / spl mu / m SiGe BiCMOS技术中的总剂量对浅沟槽隔离漏电流特性的影响
3. The Impact of the Shallow-Trench Isolation Effect on Flicker Noise of Source Follower MOSFETs in a CMOS Image Sensor [J] . Fan C. C., Chiu Y. C., Liu C., Journal of nanoscience and nanotechnology . 2018,第6期

机译：浅沟槽隔离效应对CMOS图像传感器源跟随器MOSFET闪烁噪声的影响
4. Impact Of Trench Sidewall Interface Trap In Shallow Trench Isolation On Junction Leakage Current Characteristics For Sub-0.25 /spl mu/m CMOS Devices [C] . Inaba, S., Takahashi, . 2001

机译：低于0.25 / splμm/ m CMOS器件的浅沟槽隔离中的沟槽侧壁界面陷阱对结漏电流特性的影响
5. Shallow trench isolation for CMOS. [D] . Ghanta, Lakshmi Deepika. 2014

机译：CMOS的浅沟槽隔离。
6. CMOS Image Sensors and Plasma Processes: How PMD Nitride Charging Acts on the Dark Current [O] . Yolène Sacchettini, Jean-Pierre Carrère, Romain Duru, 2019

机译：CMOS图像传感器和等离子体工艺：PMD氮化物充电如何在暗电流上作用
7. Random Telegraph Noises from the Source Follower, the Photodiode Dark Current, and the Gate-Induced Sense Node Leakage in CMOS Image Sensors [O] . Calvin Yi-Ping Chao, Shang-Fu Yeh, Meng-Hsu Wu, 2019

机译：从源跟随器，光电二极管暗电流和CMOS图像传感器中的栅极感测节点泄漏的随机电报噪声

Speckle Defect by Dark Leakage Current in Nitride Stringer at the Edge of Shallow Trench Isolation for CMOS Image Sensors

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